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this is information on a product in full production. may 2014 docid024932 rev 3 1/21 STB40N60M2, stp40n60m2, stw40n60m2 n-channel 600 v, 0.078 typ., 34 a mdmesh ii plus? low q g power mosfets in d 2 pak, to-220 and to-247 packages datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener-protected applications ? switching applications ? llc converters, resonant converters description these devices are n-channel power mosfets developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . these revolutionary power mosfets associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. they are therefore suitable for the most demanding high efficiency converters. '7$% * 6 am01476v1 d 2 pak to-220 to-247 1 3 2 tab 1 2 3 tab 1 2 3 order codes v ds @ t jmax r ds(on) max i d STB40N60M2 650 v 0.088 34 a stp40n60m2 stw40n60m2 table 1. device summary order codes marking package packaging STB40N60M2 40n60m2 d 2 pak tape and reel stp40n60m2 to-220 tube stw40n60m2 to-247 www.st.com
contents STB40N60M2, stp40n60m2, stw40n60m2 2/21 docid024932 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4.1 d 2 pak, STB40N60M2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.2 to-220, stp40n60m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.3 to-247, stw40n60m2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
docid024932 rev 3 3/21 STB40N60M2, stp40n60m2, stw40n60m2 electrical ratings 21 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 34 a i d drain current (continuous) at t c = 100 c 22 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 136 a p tot total dissipation at t c = 25 c 250 w dv/dt (2) 2. i sd 34 a, di/dt 400 a/ s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature c table 3. thermal data symbol parameter value unit d 2 pak to-220 to-247 r thj-case thermal resistance junction-case max 0.50 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board 30 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 6a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50 v) 500 mj
electrical characteristics STB40N60M2, stp40n60m2, stw40n60m2 4/21 docid024932 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0, v ds = 600 v 1 a v gs = 0, v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a234v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 17 a 0.078 0.088 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 2500 - pf c oss output capacitance - 117 - pf c rss reverse transfer capacitance -2.4-pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 342 - pf r g intrinsic gate resistance f = 1 mhz, i d = 0 - 4.4 - q g total gate charge v dd = 480 v, i d = 34 a, v gs = 10 v (see figure 17 ) -57-nc q gs gate-source charge - 10 - nc q gd gate-drain charge - 25.5 - nc table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 34 a, r g = 4.7 , v gs = 10 v (see figure 16 and figure 21 ) - 20.5 - ns t r rise time - 13.5 - ns t d(off) turn-off-delay time - 96 - ns t f fall time - 11 - ns
docid024932 rev 3 5/21 STB40N60M2, stp40n60m2, stw40n60m2 electrical characteristics 21 table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 34 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 136 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 34 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 34 a, di/dt = 100 a/ s v dd = 60 v (see figure 21 ) - 440 ns q rr reverse recovery charge - 8.2 c i rrm reverse recovery current - 37 a t rr reverse recovery time i sd = 34 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 21 ) - 568 ns q rr reverse recovery charge - 11.5 c i rrm reverse recovery current - 40.5 a
electrical characteristics STB40N60M2, stp40n60m2, stw40n60m2 6/21 docid024932 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak and to-220 figure 3. thermal impedance d 2 pak and to-220 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.1 tj=150c tc=25c single pulse 100 am16098v1 figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms 0.1 tj=150c tc = 2 5 c single pulse 100 am16099v1 figure 6. output characteristics figure 7. transfer characteristics i d 50 30 10 0 0 5 v ds (v) 10 (a) 15 70 80 5v 6v v gs =7, 8, 9, 10v 20 40 60 90 20 4v am16100v1 i d 60 40 20 0 0 4 v gs (v) 8 (a) 2 6 10 80 10 30 50 70 v ds =18v am16101v1
docid024932 rev 3 7/21 STB40N60M2, stp40n60m2, stw40n60m2 electrical characteristics 21 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v gs 6 4 2 0 0 20 q g (nc) (v) 60 8 30 40 10 v dd =480v i d =34a 12 300 200 100 0 400 500 v ds 10 50 v ds (v) am16102v1 r ds(on) 0.077 0.076 0.075 0 8 i d (a) ( ) 4 12 0.078 v gs =10v 16 0.079 0.080 0.081 20 24 28 0.082 am16103v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss 10000 am16104v1 e oss 5 0 0 100 v ds (v) (j) 400 200 300 500 600 10 15 am16105v1 v gs(th) 0.9 0.8 0.7 0.6 t j (c) (norm) -50 1.0 i d =250a 0 50 100 1.1 am15718v1 r ds(on) 2.1 1.7 1.3 0.9 t j (c) (norm) 0.5 -50 0 50 100 i d =17 a am15719v1
electrical characteristics STB40N60M2, stp40n60m2, stw40n60m2 8/21 docid024932 rev 3 figure 14. normalized v (br)dss vs temperature figure 15. source-drain diode forward vs temperature v (br)dss -50 t j (c) (norm) 0 0.9 0.94 0.98 1.02 1.06 i d =1 ma 50 100 1.1 am15714v1 v sd 0 i sd (a) (v) 6 0.5 0.6 0.7 0.8 0.9 12 18 1 t j = -50c t j = 25c t j = 150c 24 30 gipd240920132025fsr
docid024932 rev 3 9/21 STB40N60M2, stp40n60m2, stw40n60m2 test circuits 21 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd $0y 9 %5'66 9 '' 9 '' 9 ' , '0 , ' am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
package mechanical data STB40N60M2, stp40n60m2, stw40n60m2 10/21 docid024932 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid024932 rev 3 11/21 STB40N60M2, stp40n60m2, stw40n60m2 package mechanical data 21 4.1 d 2 pak, STB40N60M2 figure 22. d2pak (to-263) drawing 0079457_t
package mechanical data STB40N60M2, stp40n60m2, stw40n60m2 12/21 docid024932 rev 3 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
docid024932 rev 3 13/21 STB40N60M2, stp40n60m2, stw40n60m2 package mechanical data 21 figure 23. d2pak footprint (a) a. all dimension are in millimeters 16.90 12.20 9.75 3.50 5.08 1.60 footprint
package mechanical data STB40N60M2, stp40n60m2, stw40n60m2 14/21 docid024932 rev 3 4.2 to-220, stp40n60m2 figure 24. to-220 type a drawing bw\sh$b5hyb7
docid024932 rev 3 15/21 STB40N60M2, stp40n60m2, stw40n60m2 package mechanical data 21 table 10. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data STB40N60M2, stp40n60m2, stw40n60m2 16/21 docid024932 rev 3 4.3 to-247, stw40n60m2 figure 25. to-247 drawing 0075325_g
docid024932 rev 3 17/21 STB40N60M2, stp40n60m2, stw40n60m2 package mechanical data 21 table 11. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
packaging mechanical data STB40N60M2, stp40n60m2, stw40n60m2 18/21 docid024932 rev 3 5 packaging mechanical data figure 26. tape p1 a0 d1 p0 f w e d b0 k0 t user direction of feed p2 10 pitches cumulative tolerance on tape +/- 0.2 mm user direction of feed r bending radius b1 for machine ref. only including draft and radii concentric around b0 am08852v1 top cover tape
docid024932 rev 3 19/21 STB40N60M2, stp40n60m2, stw40n60m2 packaging mechanical data 21 figure 27. reel table 12. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 a d b full radius g measured at hub c n reel dimensions 40mm min. access hole at slot location t tape slot in core for tape start 25 mm min. width am08851v2
revision history STB40N60M2, stp40n60m2, stw40n60m2 20/21 docid024932 rev 3 6 revision history table 13. document revision history date revision changes 01-jul-2013 1 first release. 23-sep-2013 2 ? added: to-220fp and i 2 pakfp packages ? inserted: v iso in table 2 ? modified: values in table 4 , the entire typical values in table 6 , 7 and 8 ? updated: section 4: package mechanical data ? minor text changes 13-may-2014 3 ? the part numbers stf40n60m2 and stfi40n60m2 have been moved to a separate datasheet ? minor text changes
docid024932 rev 3 21/21 STB40N60M2, stp40n60m2, stw40n60m2 21 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com
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